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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2449 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) *High DC Current Gain: hFE= 3000( Min.) @(IC= 8A, VCE= 5V) *Low Collector Saturation Voltage: VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) *Complement to Type 2SB1594 B APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w scs .i w VALUE 160 160 5 10 1 UNIT .cn mi e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC 150 W TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 50mA ; IB= 0 IC= 8A; IB= 8mA B 2SD2449 MIN 160 TYP. MAX UNIT V 3.0 3.0 100 100 100 20000 V V A A A IC= 8A; VCE= 5V VCB= 160V; IE= 0 VCE= 160V; IB= 0 VEB= 5V; IC= 0 IC= 8A; VCE= 5V Current-Gain--Bandwidth Product Output Capacitance hFE-1 Classifications A 3000-10000 B w w scs .i w C IC= 12A; VCE= 5V IC= 1A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz .cn mi e 3000 2000 30 150 MHz pF 5000-15000 7000-20000 isc Websitewww.iscsemi.cn 2 |
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